A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Types of Transistor

Avalanche ​Transistor​
Avalanche ​Transistor​

An avalanche transistor is a bipolar junction transistor designed for operation in the region of its collector-current/collector-to-emitter voltage characteristics beyond the collector-to-emitter breakdown voltage, called avalanche breakdown region.

Ballistic Deflection Transistor
Ballistic Deflection Transistor

Ballistic deflection transistors are electronic devices, developed since 2006, for high-speed integrated circuits, which is a set of circuits bounded on semiconductor material.

image: quazoo.com
Ballistic ​Deflection Transistor​
Ballistic ​Deflection Transistor​

Ballistic deflection transistors are electronic devices, developed since 2006, for high-speed integrated circuits, which is a set of circuits bounded on semiconductor material.

Bio-FET​
Bio-FET​

A Bio-FET consists of two main compartments: one is the biological recognition element and the other is the field-effect transistor. In a typical BioFET, an electrically and chemically insulating layer (e.g. Silica) separates the analyte solution from the semiconducting device.

Bipolar ​Junction Transistor​
Bipolar ​Junction Transistor​

A bipolar junction transistor (bipolar transistor or BJT) is a type of transistor that uses both electron and hole charge carriers. In contrast, unipolar transistors, such as field-effect transistors, only use one kind of charge carrier. For their operation, BJTs use two junctions between two semiconductor types, n-type and p-type.

Chemical ​Field-Effect Transistor​
Chemical ​Field-Effect Transistor​

A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations in solution. When the target analyte concentration changes, the current through the transistor will change accordingly.

Darlington Transistor
Darlington Transistor

Darlington Transistor or Darlington Pair A Darlington transistor is a back to back connection of two transistors that comes as a complete package with three leads base, emitter and collector as equivalent to the single transistor.

image: yumpu.com
Darlington ​Transistor​
Darlington ​Transistor​

In electronics, the Darlington transistor (commonly called a Darlington pair) is a compound structure of a particular design made by two bipolar transistors connected in such a way that the current amplified by the first transistor is amplified further by the second one. ...

Depletion and ​Enhancement Modes​
Depletion and ​Enhancement Modes​

In field effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an ON state or an OFF state at zero gate–source voltage. Enhancement-mode MOSFETs are the common switching elements in most MOS.

Diffusion ​Transistor​
Diffusion ​Transistor​

A diffusion transistor is a bipolar junction transistor (BJT) formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than the alloy junction and grown junction processes for making BJTs.

Diode-​Connected Transistor​
Diode-​Connected Transistor​

A diode-connected transistor is a method of creating a two-terminal rectifying device (a diode) out of a three-terminal transistor.

Drift-Field ​Transistor​
Drift-Field ​Transistor​

The drift-field transistor, also called the drift transistor or graded base transistor, is a type of high-speed bipolar junction transistor having a doping-engineered electric field in the base to reduce the charge carrier base transit time.

EOSFET​
EOSFET​

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, whose voltage determines the conductivity of the device.

Field-Effect ​Transistor​
Field-Effect ​Transistor​

The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device. FETs are also known as unipolar transistors since they involve single-carrier-type operation. Many different implementations of field effect transistors exist.

Floating-Gate ​MOSFET​
Floating-Gate ​MOSFET​

The floating-gate MOSFET (FGMOS) is a field-effect transistor, whose structure is similar to a conventional MOSFET. The gate of the FGMOS is electrically isolated, creating a floating node in DC, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it.

image: mpoweruk.com
FREDFET
FREDFET

A transistor is an electronic component used in a circuit to control a large amount of current or voltage with a small amount of voltage or current. This means that it can be used to amplify or switch (rectify) electrical signals or power, allowing it to be used in a wide array of electronic devices.

source: thoughtco.com
FREDFET​
FREDFET​

Basic Point-Contact Transistor Structure. There are essentially two basic types of point-contact transistors, the npn transistor and the pnp transistor, where the n and p stand for negative and positive, respectively. The only difference between the two is the arrangement of bias voltages.

source: thoughtco.com
Grown-​Junction Transistor​
Grown-​Junction Transistor​

The grown-junction transistor was the first type of bipolar junction transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948 (patent filed June 26, 1948), six months after the first bipolar point-contact transistor.

Heterojunction ​Bipolar Transistor​
Heterojunction ​Bipolar Transistor​

The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT is that it can handle signals of very high frequencies, up to several hundred GHz.

image: nanohub.org
Heterostructure-​Emitter Bipolar Transistor​
Heterostructure-​Emitter Bipolar Transistor​

The Heterojunction-emitter bipolar transistor (HEBT), is a somewhat unusual arrangement with respect to emitter blocking of minority carriers. This is accomplished by using heterostructure confinement in the emitter, introducing an energy barrier to minority-carrier charge flow from the base.

High-Electron-Mobility Transistor
High-Electron-Mobility Transistor

A High-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a ...

High-Electron-​Mobility Transistor​
High-Electron-​Mobility Transistor​

A High-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for MOSFET).

Insulated-Gate ​Bipolar Transistor​
Insulated-Gate ​Bipolar Transistor​

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.

ISFET​
ISFET​

An ISFET is an ion-sensitive field-effect transistor, that is a field-effect transistor used for measuring ion concentrations in solution; when the ion concentration (such as H +, see pH scale) changes, the current through the transistor will change accordingly.

ITFET​
ITFET​

The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device. FETs are also known as unipolar transistors since they involve single-carrier-type operation. Many different implementations of field effect transistors exist.

image: pixshark.com
JFET​
JFET​

The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

Junctionless Nanowire Transistor
Junctionless Nanowire Transistor

Junctionless nanowire transistor (JNT), developed at Tyndall National Institute in Ireland, is a nanowire-based transistor that has no gate junction.

Junctionless ​Nanowire Transistor​
Junctionless ​Nanowire Transistor​

Junctionless nanowire transistor (JNT), developed at Tyndall National Institute in Ireland, is a nanowire-based transistor that has no gate junction.

LDMOS​
LDMOS​

LDMOS (laterally diffused metal oxide semiconductor) transistors are used in microwave/RF power amplifiers. These transistors are often fabricated on p/p + silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles.

image: rf-kit.com
MESFET
MESFET

MESFET stands for metal–semiconductor field-effect transistor. It is quite similar to a JFET in construction and terminology. The difference is that instead of using a p-n junction for a gate, a Schottky (metal-semiconductor) junction is used.

MESFET​
MESFET​

MESFET stands for metal–semiconductor field-effect transistor. It is quite similar to a JFET in construction and terminology. The difference is that instead of using a p-n junction for a gate, a Schottky (metal-semiconductor) junction is used.

Metalnitrideoxidesemiconductor Transistor
Metalnitrideoxidesemiconductor Transistor

The metal–nitride–oxide–semiconductor or metal–nitride–oxide–silicon (MNOS) transistor is an alternative and supplement to the existing MOS technology, wherein the insulation employed is a nitride-oxide layer.

MOSFET​
MOSFET​

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, whose voltage determines the conductivity of the device.

Multigate ​Device​
Multigate ​Device​

A multigate device or multiple-gate field-effect transistor (MuGFET) refers to a MOSFET (metal–oxide–semiconductor field-effect transistor) that incorporates more than one gate into a single device.

Nanofluidic ​Circuitry​
Nanofluidic ​Circuitry​

Similar to a MOSFET, a nanofluidic transistor is the fundamental element for building a nanofluidic circuitry. There is possibility to achieve a nanofluidic circuitry, which is capable of logic operation and manipulation for ionic particles.

Nanoscale ​Vacuum-Channel Transistor​
Nanoscale ​Vacuum-Channel Transistor​

A nanoscale vacuum-channel transistor (NVCT) is a transistor in which the electron transport medium is a vacuum. In a traditional solid-state transistor, a semiconductor channel exists between the source and the drain, and the current flows through the semiconductor.

Native Transistor
Native Transistor

In electronics, a native transistor (or sometimes natural transistor) is a variety of the MOS field-effect transistor that is intermediate between enhancement and depletion modes. Most common is the n-channel native transistor.

image: snipview.com
Native ​Transistor​
Native ​Transistor​

In electronics, a native transistor (or sometimes natural transistor) is a variety of the MOS field-effect transistor that is intermediate between enhancement and depletion modes. Most common is the n-channel native transistor.

NOMFET​
NOMFET​

NOMFET is a nanoparticle organic memory field-effect transistor. The transistor is designed to mimic the feature of the human synapse known as plasticity, or the variation of the speed and strength of the signal going from neuron to neuron.

image: robaid.com
Optical Transistor
Optical Transistor

An optical transistor, also known as an optical switch, is a device that switches or amplifies optical signals.Light occurring on an optical transistor’s input changes the intensity of light emitted from the transistor’s output. Output power is supplied by an additional optical source.

Optical ​Transistor​
Optical ​Transistor​

An optical transistor, also known as an optical switch, is a device that switches or amplifies optical signals. Light occurring on an optical transistor’s input changes the intensity of light emitted from the transistor’s output.

Oxide Thin-Film Transistor
Oxide Thin-Film Transistor

Oxide thin-film transistor. An oxide thin-film transistor (TFT) is a particular kind of field-effect transistor made by depositing thin films of a semiconductor active layer as well as the dielectric layer and metallic contacts over a supporting substrate.

image: mdpi.com
Oxide Thin-Film ​Transistor​
Oxide Thin-Film ​Transistor​

An oxide thin-film transistor (TFT) is a particular kind of field-effect transistor made by depositing thin films of a semiconductor active layer as well as the dielectric layer and metallic contacts over a supporting substrate.

Pentode ​Transistor​
Pentode ​Transistor​

A pentode transistor is any transistor having five active terminals. Early pentode transistors One early pentode transistor was developed in the early 1950s as an improvement over the point-contact transistor.

Point-Contact Transistor
Point-Contact Transistor

Point-contact transistor. A point-contact transistor was the first type of solid-state electronic transistor ever constructed. It was developed by research scientists John Bardeen, William Shockley, and Walter Brattain at Bell Laboratories in December, 1947.[1] They worked in a group led by physicist William Shockley.

Point-Contact ​Transistor​
Point-Contact ​Transistor​

A point-contact transistor was the first type of solid-state electronic transistor ever constructed. It was developed by research scientists John Bardeen, William Shockley, and Walter Brattain at Bell Laboratories in December, 1947.

QFET​
QFET​

The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device. FETs are also known as unipolar transistors since they involve single-carrier-type operation. Many different implementations of field effect transistors exist.

Schottky ​Transistor​
Schottky ​Transistor​

Schottky transistors prevent saturation and the stored base charge. A Schottky transistor places a Schottky diode between the base and collector of the transistor. As the transistor comes close to saturating, the Schottky diode conducts and shunts any excess base drive to the collector.

Spacistor
Spacistor

The spacistor was a type of transistor developed in the 1950s as an improvement over the point-contact transistor and the later alloy junction transistor. It offered much higher speed than earlier transistors.

Spacistor​
Spacistor​

The transistor was invented by three scientists at the Bell Laboratories in 1947, and it rapidly replaced the vacuum tube as an electronic signal regulator. A transistor regulates current or voltage flow and acts as a switch or gate for electronic signals.